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Datasheets for 60 V

Datasheets found :: 1702
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No. Part Name Description Manufacturer
121 2N3904 60 V, NPN small signal transistor TRANSYS Electronics Limited
122 2N4399 -60 V, -30 A, 200 W, PNP silicon power transistor Texas Instruments
123 2N4899 Medium-power PNP silicon power transistor. 4 A, 60 V, 25 W. Motorola
124 2N5302 60 V, 30 A, 200 W, NPN silicon power transistor Texas Instruments
125 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
126 2N5551HRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
127 2N5551HRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
128 2N5551RHRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
129 2N5551RHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
130 2N5551RUBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
131 2N5551RUBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
132 2N5551SHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
133 2N5551UB1 Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
134 2N5551UBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
135 2N5551UBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
136 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
137 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
138 2N6315 Power NPN silicon transistor. 7.0 A, 60 V, 90 W. Motorola
139 2N6317 Power PNP silicon transistor. 7.0 A, 60 V, 90 W. Motorola
140 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
141 2N6387 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
142 2N6576 15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
143 2N6649 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
144 2N6667 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
145 2N6781 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
146 2N7000 Small Signal MOSFET 200 mAmps, 60 Volts ON Semiconductor
147 2N7000 60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
148 2N7000 60 V, N-channel-enhancement TRANSYS Electronics Limited
149 2N7000-D Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 ON Semiconductor
150 2N7000G Small Signal MOSFET 200 mAmps, 60 Volts ON Semiconductor


Datasheets found :: 1702
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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