No. |
Part Name |
Description |
Manufacturer |
61 |
1N5371B |
60 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
62 |
1N5371B |
60 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
63 |
1N5384B |
160 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
64 |
1N5384B |
160 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
65 |
1N5398G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
Jinan Gude Electronic Device |
66 |
1N5954 |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
67 |
1N5954A |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
68 |
1N5954B |
160 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
69 |
1N5954C |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
70 |
1N5954D |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
71 |
1N6263 |
60 V, 400 mW silicon schottky barrier diode |
BKC International Electronics |
72 |
1N6300 |
160 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
73 |
1N6300A |
160 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
74 |
1N6300C |
160 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
75 |
1N6300CA |
160 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
76 |
1N636 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
77 |
1N774 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
78 |
1N774A |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
79 |
1N775 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
80 |
1N777 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
81 |
1N909 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
82 |
1N949 |
60 V, 500 mA, gold bonded diode |
BKC International Electronics |
83 |
1N990A |
160 V, zener diode |
Leshan Radio Company |
84 |
1SMA160Z |
160 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
85 |
1SMB2EZ160 |
160 V, 2 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
86 |
1SMB3EZ160 |
160 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
87 |
1SMB5954 |
160 V, 1.5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
88 |
1SMB5954A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 160 V. +-10% tolerance. |
Motorola |
89 |
1SMB5954B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 160 V. +-5% tolerance. |
Motorola |
90 |
1SMC5371 |
60 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
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