No. |
Part Name |
Description |
Manufacturer |
31 |
1K5S-N015 |
Input voltage 200-260 VAC;output voltage 15 VDC;output current:100 A; 1.5 KW enclosed parallel power supply |
FranMar International |
32 |
1K5S-N024 |
Input voltage 200-260 VAC;output voltage 24 VDC;output current:62.5 A; 1.5 KW enclosed parallel power supply |
FranMar International |
33 |
1K5S-N048 |
Input voltage 200-260 VAC;output voltage 48 VDC;output current:32 A; 1.5 KW enclosed parallel power supply |
FranMar International |
34 |
1M160Z |
160 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
35 |
1M160ZS1 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance. |
Motorola |
36 |
1M160ZS2 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance. |
Motorola |
37 |
1M160ZS5 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 5% tolerance. |
Motorola |
38 |
1N119 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
39 |
1N120 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
40 |
1N266 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
41 |
1N276 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
42 |
1N278 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
43 |
1N287 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
44 |
1N3465 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
45 |
1N417 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
46 |
1N418 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
47 |
1N457 |
60 V, 500 mW low leakage diode |
BKC International Electronics |
48 |
1N457A |
60 V, 500 mW low leakage diode |
BKC International Electronics |
49 |
1N462A |
60 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
50 |
1N480 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
51 |
1N498 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
52 |
1N5264A |
60 V, 2.1 mA, zener diode |
Leshan Radio Company |
53 |
1N5264AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-10%. |
Microsemi |
54 |
1N5264BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-5%. |
Microsemi |
55 |
1N5264C |
60 V, 2.1 mA, zener diode |
Leshan Radio Company |
56 |
1N5264D |
60 V, 2.1 mA, zener diode |
Leshan Radio Company |
57 |
1N5264UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. |
Microsemi |
58 |
1N5277AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. Tolerance +-10%. |
Microsemi |
59 |
1N5277BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. Tolerance +-5%. |
Microsemi |
60 |
1N5277UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. |
Microsemi |
| | | |