No. |
Part Name |
Description |
Manufacturer |
121 |
ASI10669 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
122 |
ASM3P2669 |
Low Power Peak EMI Reducing Solution |
ON Semiconductor |
123 |
ASM3P2669AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
124 |
ASM3P2669AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
125 |
ASM3P2669AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
126 |
ASM3P2669AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
127 |
ASM3P2669AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
128 |
AUIRF7669L2TR |
100V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 114.0 amperes optimized with low on resistance. |
International Rectifier |
129 |
AUIRF7669L2TR1 |
100V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 114.0 amperes optimized with low on resistance. |
International Rectifier |
130 |
BB669 |
Varactordiodes - Silicon tuning diode for VHF 2-band hyperband TV tuners |
Infineon |
131 |
BB669 |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) |
Siemens |
132 |
BD6669FV |
Optical Disc LSIs > Motor/Actuator driver > Spindle motor driver |
ROHM |
133 |
CDS0669 |
DAICO Switches SPST, SP3T |
DAICO Industries |
134 |
CSD669 |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 320 hFE. |
Continental Device India Limited |
135 |
CSD669A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 200 hFE. |
Continental Device India Limited |
136 |
CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
137 |
CSD669AC |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
138 |
CSD669B |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
139 |
CSD669C |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
140 |
CSD669D |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 160 - 320 hFE. |
Continental Device India Limited |
141 |
DS1669 |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
142 |
DS1669-050 |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
143 |
DS1669-050 |
ELECTRONIC DIGITAL RHEOSTAT |
MAXIM - Dallas Semiconductor |
144 |
DS1669-10 |
Electronic digital rheostat, ~ 10 k. |
Dallas Semiconductor |
145 |
DS1669-10 |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
146 |
DS1669-10+ |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
147 |
DS1669-100 |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
148 |
DS1669-100+ |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
149 |
DS1669-50 |
Electronic digital rheostat, ~ 50 k. |
Dallas Semiconductor |
150 |
DS1669-50 |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
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