| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AOY66923 |
Single MV MOSFETs (40V - 400V) |
Alpha & Omega Semiconductor |
| 122 |
AR6690 |
AR6690 |
PerkinElmer Optoelectronics |
| 123 |
AR6690 |
AR6690 |
PerkinElmer Optoelectronics |
| 124 |
ASI10669 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 125 |
ASM3P2669 |
Low Power Peak EMI Reducing Solution |
ON Semiconductor |
| 126 |
ASM3P2669AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 127 |
ASM3P2669AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 128 |
ASM3P2669AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 129 |
ASM3P2669AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 130 |
ASM3P2669AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 131 |
AUIRF7669L2TR |
100V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 114.0 amperes optimized with low on resistance. |
International Rectifier |
| 132 |
AUIRF7669L2TR1 |
100V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 114.0 amperes optimized with low on resistance. |
International Rectifier |
| 133 |
BB669 |
Varactordiodes - Silicon tuning diode for VHF 2-band hyperband TV tuners |
Infineon |
| 134 |
BB669 |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) |
Siemens |
| 135 |
BD6669FV |
Optical Disc LSIs > Motor/Actuator driver > Spindle motor driver |
ROHM |
| 136 |
C1669C |
Marking for UPC1669C part number, C08 NEC package |
NEC |
| 137 |
C1669C |
Marking for UPC1669C part number, C08 NEC package |
NEC |
| 138 |
CDS0669 |
DAICO Switches SPST, SP3T |
DAICO Industries |
| 139 |
CSD669 |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 320 hFE. |
Continental Device India Limited |
| 140 |
CSD669A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 200 hFE. |
Continental Device India Limited |
| 141 |
CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 142 |
CSD669AC |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 143 |
CSD669B |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 144 |
CSD669C |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 145 |
CSD669D |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 160 - 320 hFE. |
Continental Device India Limited |
| 146 |
DS1669 |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
| 147 |
DS1669-050 |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
| 148 |
DS1669-050 |
ELECTRONIC DIGITAL RHEOSTAT |
MAXIM - Dallas Semiconductor |
| 149 |
DS1669-10 |
Electronic digital rheostat, ~ 10 k. |
Dallas Semiconductor |
| 150 |
DS1669-10 |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
| | | |
