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Datasheets for 669

Datasheets found :: 1386
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |
No. Part Name Description Manufacturer
241 JANTXV2N6693 NPN Transistor Microsemi
242 K4R271669A Direct RDRAM Samsung Electronic
243 K4R271669A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
244 K4R271669A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
245 K4R271669A-NB(M)CCG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
246 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
247 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
248 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
249 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
250 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
251 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
252 K4R271669B Direct RDRAM Samsung Electronic
253 K4R271669B Direct RDRAM� Data Sheet Samsung Electronic
254 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
255 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
256 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
257 K4R271669B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
258 K4R271669B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
259 K4R271669B-NB(M)CCK8 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
260 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
261 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
262 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
263 K4R271669D Direct RDRAM� Data Sheet Samsung Electronic
264 K4R271669D-T 128Mbit RDRAM(D-die) Samsung Electronic
265 K4R271669D-TCS8 128Mbit RDRAM(D-die) Samsung Electronic
266 K4R271669E 128Mbit RDRAM(E-die) Samsung Electronic
267 K4R271669F 128Mbit RDRAM(F-die) Samsung Electronic
268 K4R441869A-N(M) K4R271669A-N(M):Direct RDRAM� Data Sheet Samsung Electronic
269 K4R441869B K4R271669B:Direct RDRAM� Data Sheet Samsung Electronic
270 K4R521669A 250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks Samsung Electronic


Datasheets found :: 1386
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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