| No. |
Part Name |
Description |
Manufacturer |
| 211 |
HD74LS669 |
Synchronous Up/Down 4-bit Binary Counter |
Hitachi Semiconductor |
| 212 |
HD74LS669 |
Sync Up Down 4Bit Binary Counters |
Hitachi Semiconductor |
| 213 |
HI3669 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 214 |
HI669A |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 215 |
HJ3669 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 216 |
HJ669A |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 217 |
HM3669 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 218 |
HSD669A |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 219 |
IDT5962-8866905YA |
2K x 9 AsyncFIFO, 5.0V |
IDT |
| 220 |
IDT5962-8866905ZA |
2K x 9 AsyncFIFO, 5.0V |
IDT |
| 221 |
IDT5962-8866906YA |
2K x 9 AsyncFIFO, 5.0V |
IDT |
| 222 |
IDT5962-8866906ZA |
2K x 9 AsyncFIFO, 5.0V |
IDT |
| 223 |
IRF6691 |
20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET package |
International Rectifier |
| 224 |
IRF6691TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 225 |
IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 226 |
IRGP6690D |
600V UltraFast Co-Pack IGBT in a TO-247 package |
International Rectifier |
| 227 |
IRGP6690D-EPBF |
600V UltraFast Co-Pack IGBT in a TO-247 package |
International Rectifier |
| 228 |
IRGP6690DPBF |
600V UltraFast Co-Pack IGBT in a TO-247 package |
International Rectifier |
| 229 |
J3669 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 230 |
J669A |
Mini size of Discrete semiconductor elements |
SINYORK |
| 231 |
JAN2N6690 |
NPN Transistor |
Microsemi |
| 232 |
JAN2N6691 |
NPN Transistor |
Microsemi |
| 233 |
JAN2N6693 |
NPN Transistor |
Microsemi |
| 234 |
JANTX2N6690 |
NPN Transistor |
Microsemi |
| 235 |
JANTX2N6691 |
NPN Transistor |
Microsemi |
| 236 |
JANTX2N6693 |
NPN Transistor |
Microsemi |
| 237 |
JANTXV2N6690 |
NPN Transistor |
Microsemi |
| 238 |
JANTXV2N6691 |
NPN Transistor |
Microsemi |
| 239 |
JANTXV2N6693 |
NPN Transistor |
Microsemi |
| 240 |
K4R271669A |
Direct RDRAM |
Samsung Electronic |
| | | |
