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Datasheets for BC30

Datasheets found :: 388
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 BC308B Silicon PNP transistor, general purpose SESCOSEM
122 BC308B PNP silicon transistor, audio amplification and general purpose SESCOSEM
123 BC308B PNP Silicon Transistor for AF pre- and driver stages as well as for universal application Siemens
124 BC308BBU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
125 BC308BP General purpose PNP transistor FERRANTI
126 BC308BTA PNP Epitaxial Silicon Transistor Fairchild Semiconductor
127 BC308BU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
128 BC308C PNP Epitaxial Silicon Transistor Fairchild Semiconductor
129 BC308C Silicon PNP Epitaxial-Planar Transistor (in german) ITT Semiconductors
130 BC308C Amplifier Transistors(PNP) Motorola
131 BC308C Amplifier Transistors(PNP Silicon) ON Semiconductor
132 BC308C PNP Silicon Transistor for AF pre- and driver stages as well as for universal application Siemens
133 BC308CBU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
134 BC308CP General purpose PNP transistor FERRANTI
135 BC308P General purpose PNP transistor FERRANTI
136 BC308TA PNP Epitaxial Silicon Transistor Fairchild Semiconductor
137 BC308TAR PNP Epitaxial Silicon Transistor Fairchild Semiconductor
138 BC308VI Silicon PNP transistor, general purpose SESCOSEM
139 BC308VI PNP silicon transistor, audio amplification and general purpose SESCOSEM
140 BC309 Switching and Amplifier Applications Fairchild Semiconductor
141 BC309 Si-PLANAR EPITAXIAL-pnp TRANSISTOR IPRS Baneasa
142 BC309 Silicon PNP Epitaxial-Planar Transistor (in german) ITT Semiconductors
143 BC309 General Purpose Transistor Korea Electronics (KEC)
144 BC309 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
145 BC309 Silicon p-n-p low power transistor Mullard
146 BC309 Transistor PNP Siemens
147 BC309 PNP Silicon Transistor for AF pre- and driver stages as well as for universal application Siemens
148 BC309 Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy Ultra CEMI
149 BC309 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
150 BC309A 0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 220 hFE Continental Device India Limited


Datasheets found :: 388
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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