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Datasheets for BC30

Datasheets found :: 388
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 BC303 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 40 - 240 hFE. Continental Device India Limited
32 BC303 PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES Micro Electronics
33 BC303 Transistor, medium power audio amplifiers SGS-ATES
34 BC303-4 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 40 - 80 hFE. Continental Device India Limited
35 BC303-5 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 70 - 140 hFE. Continental Device India Limited
36 BC303-6 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 120 - 240 hFE. Continental Device India Limited
37 BC304 Leaded Small Signal Transistor General Purpose Central Semiconductor
38 BC304 0.850W General Purpose PNP Metal Can Transistor. 45V Vceo, 0.500A Ic, 40 - 240 hFE. Continental Device India Limited
39 BC304 PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES Micro Electronics
40 BC304 Transistor, medium power audio amplifiers SGS-ATES
41 BC307 0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 800 hFE Continental Device India Limited
42 BC307 Switching and Amplifier Applications Fairchild Semiconductor
43 BC307 Si-PLANAR EPITAXIAL-pnp TRANSISTOR IPRS Baneasa
44 BC307 Silicon PNP Epitaxial-Planar Transistor (in german) ITT Semiconductors
45 BC307 General Purpose Transistor Korea Electronics (KEC)
46 BC307 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
47 BC307 Amplifier Transistors(PNP) Motorola
48 BC307 Silicon p-n-p low power transistor Mullard
49 BC307 Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk New Jersey Semiconductor
50 BC307 Amplifier Transistor PNP ON Semiconductor
51 BC307 PNP general purpose transistors Philips
52 BC307 Transistor PNP Siemens
53 BC307 PNP Silicon Transistor for AF pre- and driver stages as well as for universal application Siemens
54 BC307 Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy Ultra CEMI
55 BC307 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
56 BC307-16 Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 T/R New Jersey Semiconductor
57 BC307-D Amplifier Transistors PNP Silicon ON Semiconductor
58 BC307A 1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 220 hFE Continental Device India Limited
59 BC307A PNP EPITAXIAL SILICON TRANSISTOR Fairchild Semiconductor
60 BC307A Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 IPRS Baneasa


Datasheets found :: 388
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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