No. |
Part Name |
Description |
Manufacturer |
31 |
BC303 |
0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 40 - 240 hFE. |
Continental Device India Limited |
32 |
BC303 |
PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
33 |
BC303 |
Transistor, medium power audio amplifiers |
SGS-ATES |
34 |
BC303-4 |
0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 40 - 80 hFE. |
Continental Device India Limited |
35 |
BC303-5 |
0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 70 - 140 hFE. |
Continental Device India Limited |
36 |
BC303-6 |
0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 120 - 240 hFE. |
Continental Device India Limited |
37 |
BC304 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
38 |
BC304 |
0.850W General Purpose PNP Metal Can Transistor. 45V Vceo, 0.500A Ic, 40 - 240 hFE. |
Continental Device India Limited |
39 |
BC304 |
PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
40 |
BC304 |
Transistor, medium power audio amplifiers |
SGS-ATES |
41 |
BC307 |
0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 800 hFE |
Continental Device India Limited |
42 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
43 |
BC307 |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR |
IPRS Baneasa |
44 |
BC307 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
45 |
BC307 |
General Purpose Transistor |
Korea Electronics (KEC) |
46 |
BC307 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
47 |
BC307 |
Amplifier Transistors(PNP) |
Motorola |
48 |
BC307 |
Silicon p-n-p low power transistor |
Mullard |
49 |
BC307 |
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
50 |
BC307 |
Amplifier Transistor PNP |
ON Semiconductor |
51 |
BC307 |
PNP general purpose transistors |
Philips |
52 |
BC307 |
Transistor PNP |
Siemens |
53 |
BC307 |
PNP Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
54 |
BC307 |
Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy |
Ultra CEMI |
55 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
56 |
BC307-16 |
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
57 |
BC307-D |
Amplifier Transistors PNP Silicon |
ON Semiconductor |
58 |
BC307A |
1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 220 hFE |
Continental Device India Limited |
59 |
BC307A |
PNP EPITAXIAL SILICON TRANSISTOR |
Fairchild Semiconductor |
60 |
BC307A |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
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