No. |
Part Name |
Description |
Manufacturer |
61 |
BC304 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
62 |
BC304 |
0.850W General Purpose PNP Metal Can Transistor. 45V Vceo, 0.500A Ic, 40 - 240 hFE. |
Continental Device India Limited |
63 |
BC304 |
PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
64 |
BC304 |
Silicon epitaxial planar transistor |
Mikroelektronikai Vallalat |
65 |
BC304 |
Silicon Planar PNP medium power audio transistor |
SGS-ATES |
66 |
BC304 |
Transistor, medium power audio amplifiers |
SGS-ATES |
67 |
BC304 |
Epitaxial PNP silicon planar transistor |
TUNGSRAM |
68 |
BC304-4 |
Epitaxial PNP silicon planar transistor |
TUNGSRAM |
69 |
BC304-5 |
Epitaxial PNP silicon planar transistor |
TUNGSRAM |
70 |
BC304-6 |
Epitaxial PNP silicon planar transistor |
TUNGSRAM |
71 |
BC307 |
Silicon PNP Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
72 |
BC307 |
0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 800 hFE |
Continental Device India Limited |
73 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
74 |
BC307 |
PNP Low-Power General Purpose Transistor - plastic case |
IPRS Baneasa |
75 |
BC307 |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR |
IPRS Baneasa |
76 |
BC307 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
77 |
BC307 |
General Purpose Transistor |
Korea Electronics (KEC) |
78 |
BC307 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
79 |
BC307 |
PNP silicon epitaxial planar transistor |
Mikroelektronikai Vallalat |
80 |
BC307 |
Amplifier Transistors(PNP) |
Motorola |
81 |
BC307 |
Silicon p-n-p low power transistor |
Mullard |
82 |
BC307 |
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
83 |
BC307 |
Amplifier Transistor PNP |
ON Semiconductor |
84 |
BC307 |
PNP general purpose transistors |
Philips |
85 |
BC307 |
Transistor PNP |
Siemens |
86 |
BC307 |
PNP Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
87 |
BC307 |
Epitaxial PNP silicon planar transistor |
TUNGSRAM |
88 |
BC307 |
Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy |
Ultra CEMI |
89 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
90 |
BC307-16 |
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
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