| No. |
Part Name |
Description |
Manufacturer |
| 121 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 122 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 123 |
BCR10PM |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 124 |
BCR10PM-12 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 125 |
BCR10PM-12L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 126 |
BCR10PM-8 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 127 |
BCR10PM-8L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 128 |
BCR10PN |
Digital Transistors - SOT363 package |
Infineon |
| 129 |
BCR10PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
| 130 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 131 |
BCR112 |
Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm |
Infineon |
| 132 |
BCR112 |
NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) |
Siemens |
| 133 |
BCR112F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 134 |
BCR112FE6327 |
Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhm |
Infineon |
| 135 |
BCR112L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
| 136 |
BCR112L3E6327 |
Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhm |
Infineon |
| 137 |
BCR112T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
| 138 |
BCR112TE6327 |
Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm |
Infineon |
| 139 |
BCR112U |
NPN Silicon Digital Transistor |
Infineon |
| 140 |
BCR112W |
Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm |
Infineon |
| 141 |
BCR112W |
NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) |
Siemens |
| 142 |
BCR114 |
NPN Silicon Digital Transistor |
Infineon |
| 143 |
BCR114F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 144 |
BCR114FE6327 |
Digital Transistors - R1= 4,7 kOhm ; R2= 10 kOhm |
Infineon |
| 145 |
BCR114L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
| 146 |
BCR114L3E6327 |
Digital Transistors - R1= 4,7 kOhm ; R2= 10 kOhm |
Infineon |
| 147 |
BCR114T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
| 148 |
BCR114TE6327 |
Digital Transistors - R1= 4,7kOhm; R2= 10kOhm |
Infineon |
| 149 |
BCR116 |
Digital Transistors - R1=4.7kOhm; R2=47kOhm |
Infineon |
| 150 |
BCR116 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| | | |
