| No. |
Part Name |
Description |
Manufacturer |
| 91 |
BCR103T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
| 92 |
BCR103TE6327 |
Digital Transistors - R1= 2,2kOhm; R2= 2,2kOhm |
Infineon |
| 93 |
BCR103U |
NPN Silicon Digital Transistor |
Infineon |
| 94 |
BCR108 |
Single digital (complex) AF-Transistors in SOT23 package |
Infineon |
| 95 |
BCR108 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit |
Siemens |
| 96 |
BCR108E6327 |
Digital Transistors - R1=2.2 kOhm; R2=47kOhm |
Infineon |
| 97 |
BCR108F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 98 |
BCR108FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
| 99 |
BCR108L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
| 100 |
BCR108L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
| 101 |
BCR108S |
NPN Silicon Digital Transistor |
Infineon |
| 102 |
BCR108S |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 103 |
BCR108S E6327 |
Dual Built-in Resistor AF Transistors; 2xNPN; Industrial Standars Types, Icmax of 100mA; Vceo of 50V |
Infineon |
| 104 |
BCR108SE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm SOT363 |
Infineon |
| 105 |
BCR108T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
| 106 |
BCR108TE6327 |
Digital Transistors - R1= 2,2kOhm; R2= 47kOhm |
Infineon |
| 107 |
BCR108W |
Single digital (complex) AF-Transistors in SOT323 package |
Infineon |
| 108 |
BCR108W |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 109 |
BCR108WE6327 |
Digital Transistors - R1=2.2 kOhm; R2=47 kOhm |
Infineon |
| 110 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 111 |
BCR10CM |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 112 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 113 |
BCR10CM-12 |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 114 |
BCR10CM-12L |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 115 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 116 |
BCR10CM-8 |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 117 |
BCR10CM-8L |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 118 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 119 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 120 |
BCR10CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
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