| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BCR129W |
Single digital (complex) AF-Transistors in SOT323 package |
Infineon |
| 182 |
BCR129WE6327 |
Digital Transistors - R1= 10 kOhm |
Infineon |
| 183 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 184 |
BCR12CM |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 185 |
BCR12CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 186 |
BCR12CM-12 |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 187 |
BCR12CM-12L |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 188 |
BCR12CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 189 |
BCR12CM-8 |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 190 |
BCR12CM-8L |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 191 |
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 192 |
BCR12CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 193 |
BCR12CS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 194 |
BCR12CS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 195 |
BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 196 |
BCR12PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 197 |
BCR12PM |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 198 |
BCR12PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 199 |
BCR12PM-12 |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 200 |
BCR12PM-12L |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 201 |
BCR12PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 202 |
BCR12PM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 203 |
BCR12PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 204 |
BCR12PM-8 |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 205 |
BCR12PM-8L |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 206 |
BCR12UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 207 |
BCR133 |
Digital Transistors - R1=10 kOhm; R2=10 kOhm |
Infineon |
| 208 |
BCR133 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 209 |
BCR133F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 210 |
BCR133FE6327 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
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