No. |
Part Name |
Description |
Manufacturer |
121 |
BCR12CM-8 |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
122 |
BCR12CM-8L |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
123 |
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
124 |
BCR12CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
125 |
BCR12CS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
126 |
BCR12CS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
127 |
BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
128 |
BCR12PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
129 |
BCR12PM |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
130 |
BCR12PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
131 |
BCR12PM-12 |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
132 |
BCR12PM-12L |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
133 |
BCR12PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
134 |
BCR12PM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
135 |
BCR12PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
136 |
BCR12PM-8 |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
137 |
BCR12PM-8L |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
138 |
BCR12UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
139 |
BCR133 |
Digital Transistors - R1=10 kOhm; R2=10 kOhm |
Infineon |
140 |
BCR133 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
141 |
BCR133F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
142 |
BCR133FE6327 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
143 |
BCR133L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
144 |
BCR133L3E6327 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
145 |
BCR133S |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm SOT363 |
Infineon |
146 |
BCR133S |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
147 |
BCR133T |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
148 |
BCR133U |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm SC74 |
Infineon |
149 |
BCR133W |
Digital Transistors - R1=10 kOhm; R2=10 kOhm |
Infineon |
150 |
BCR133W |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
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