| No. |
Part Name |
Description |
Manufacturer |
| 121 |
BCR12CM-8 |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 122 |
BCR12CM-8L |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 123 |
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 124 |
BCR12CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 125 |
BCR12CS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 126 |
BCR12CS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 127 |
BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 128 |
BCR12PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 129 |
BCR12PM |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 130 |
BCR12PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 131 |
BCR12PM-12 |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 132 |
BCR12PM-12L |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 133 |
BCR12PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 134 |
BCR12PM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 135 |
BCR12PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 136 |
BCR12PM-8 |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 137 |
BCR12PM-8L |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 138 |
BCR12UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 139 |
BCR133 |
Digital Transistors - R1=10 kOhm; R2=10 kOhm |
Infineon |
| 140 |
BCR133 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 141 |
BCR133F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 142 |
BCR133FE6327 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
| 143 |
BCR133L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
| 144 |
BCR133L3E6327 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
| 145 |
BCR133S |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm SOT363 |
Infineon |
| 146 |
BCR133S |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 147 |
BCR133T |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
| 148 |
BCR133U |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm SC74 |
Infineon |
| 149 |
BCR133W |
Digital Transistors - R1=10 kOhm; R2=10 kOhm |
Infineon |
| 150 |
BCR133W |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| | | |
