| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BCR108L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
| 32 |
BCR108L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
| 33 |
BCR108S |
NPN Silicon Digital Transistor |
Infineon |
| 34 |
BCR108S |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 35 |
BCR108S E6327 |
Dual Built-in Resistor AF Transistors; 2xNPN; Industrial Standars Types, Icmax of 100mA; Vceo of 50V |
Infineon |
| 36 |
BCR108SE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm SOT363 |
Infineon |
| 37 |
BCR108T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
| 38 |
BCR108TE6327 |
Digital Transistors - R1= 2,2kOhm; R2= 47kOhm |
Infineon |
| 39 |
BCR108W |
Single digital (complex) AF-Transistors in SOT323 package |
Infineon |
| 40 |
BCR108W |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 41 |
BCR108WE6327 |
Digital Transistors - R1=2.2 kOhm; R2=47 kOhm |
Infineon |
| 42 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 43 |
BCR10CM |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 44 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 45 |
BCR10CM-12 |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 46 |
BCR10CM-12L |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 47 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 48 |
BCR10CM-8 |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 49 |
BCR10CM-8L |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 50 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 51 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 52 |
BCR10CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 53 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 54 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 55 |
BCR10PM |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 56 |
BCR10PM-12 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 57 |
BCR10PM-12L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 58 |
BCR10PM-8 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 59 |
BCR10PM-8L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 60 |
BCR10PN |
Digital Transistors - SOT363 package |
Infineon |
| | | |
