No. |
Part Name |
Description |
Manufacturer |
31 |
BCR108L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
32 |
BCR108L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
33 |
BCR108S |
NPN Silicon Digital Transistor |
Infineon |
34 |
BCR108S |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
35 |
BCR108S E6327 |
Dual Built-in Resistor AF Transistors; 2xNPN; Industrial Standars Types, Icmax of 100mA; Vceo of 50V |
Infineon |
36 |
BCR108SE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm SOT363 |
Infineon |
37 |
BCR108T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
38 |
BCR108TE6327 |
Digital Transistors - R1= 2,2kOhm; R2= 47kOhm |
Infineon |
39 |
BCR108W |
Single digital (complex) AF-Transistors in SOT323 package |
Infineon |
40 |
BCR108W |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
41 |
BCR108WE6327 |
Digital Transistors - R1=2.2 kOhm; R2=47 kOhm |
Infineon |
42 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
43 |
BCR10CM |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
44 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
45 |
BCR10CM-12 |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
46 |
BCR10CM-12L |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
47 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
48 |
BCR10CM-8 |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
49 |
BCR10CM-8L |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
50 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
51 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
52 |
BCR10CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
53 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
54 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
55 |
BCR10PM |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
56 |
BCR10PM-12 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
57 |
BCR10PM-12L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
58 |
BCR10PM-8 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
59 |
BCR10PM-8L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
60 |
BCR10PN |
Digital Transistors - SOT363 package |
Infineon |
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