No. |
Part Name |
Description |
Manufacturer |
91 |
BCR116W |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
92 |
BCR119 |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
93 |
BCR119 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
94 |
BCR119F |
Digital Transistors - R1=4.7kOhm |
Infineon |
95 |
BCR119L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
96 |
BCR119L3E6327 |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
97 |
BCR119S |
Digital Transistors - R1= 4,7 kOhm SOT363 |
Infineon |
98 |
BCR119S |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
99 |
BCR119T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
100 |
BCR119TE6327 |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
101 |
BCR119W |
Digital Transistors - R1=4.7 kOhm |
Infineon |
102 |
BCR119W |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
103 |
BCR12 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
104 |
BCR129 |
Digital Transistors - R1=10 kOhm |
Infineon |
105 |
BCR129 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
106 |
BCR129F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
107 |
BCR129FE6327 |
Digital Transistors - R1= 10 kOhm |
Infineon |
108 |
BCR129L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
109 |
BCR129L3E6327 |
Digital Transistors - R1= 10 kOhm |
Infineon |
110 |
BCR129S |
Digital Transistors - R1= 10 kOhm SOT363 |
Infineon |
111 |
BCR129S |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
112 |
BCR129T |
Digital Transistors - R1= 10 kOhm |
Infineon |
113 |
BCR129W |
Single digital (complex) AF-Transistors in SOT323 package |
Infineon |
114 |
BCR129WE6327 |
Digital Transistors - R1= 10 kOhm |
Infineon |
115 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
116 |
BCR12CM |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
117 |
BCR12CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
118 |
BCR12CM-12 |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
119 |
BCR12CM-12L |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
120 |
BCR12CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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