| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N4238 |
6.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 1.000A Ic, 30 hFE. |
Continental Device India Limited |
| 122 |
2N4239 |
1.000W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 15 hFE. |
Continental Device India Limited |
| 123 |
2N4347 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 124 |
2N4348 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 125 |
2N4400 |
General Purpose NPN Silicon Switching and amplifyng transistor |
ITT Semiconductors |
| 126 |
2N4401 |
General Purpose NPN Silicon Switching and amplifyng transistor |
ITT Semiconductors |
| 127 |
2N4401 |
Small Signal General Purpose NPN |
ON Semiconductor |
| 128 |
2N4401RLRA |
Small Signal General Purpose NPN |
ON Semiconductor |
| 129 |
2N4401RLRM |
Small Signal General Purpose NPN |
ON Semiconductor |
| 130 |
2N4401RLRP |
Small Signal General Purpose NPN |
ON Semiconductor |
| 131 |
2N4409 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE |
Continental Device India Limited |
| 132 |
2N5013 |
800 V, 0.5 A high voltage NPN transistor |
Solid State Devices Inc |
| 133 |
2N5014 |
900 V, 0.5 A high voltage NPN transistor |
Solid State Devices Inc |
| 134 |
2N5015 |
1000 V, 0.5 A high voltage NPN transistor |
Solid State Devices Inc |
| 135 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
| 136 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 137 |
2N5095 |
500 V, 1 A high voltage NPN transistor |
Solid State Devices Inc |
| 138 |
2N5097 |
600 V, 1 A high voltage NPN transistor |
Solid State Devices Inc |
| 139 |
2N5172 |
0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE |
Continental Device India Limited |
| 140 |
2N5179 |
0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
| 141 |
2N5190 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 142 |
2N5191 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 143 |
2N5192 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 144 |
2N5209 |
Low Noise NPN Transistor |
FERRANTI |
| 145 |
2N5209 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 146 |
2N5210 |
Low Noise NPN Transistor |
FERRANTI |
| 147 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 148 |
2N5219 |
General purpose NPN silicon transistor |
ITT Semiconductors |
| 149 |
2N5220 |
Low-Power general purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 150 |
2N5223 |
Low-Level General purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| | | |
