| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N5224 |
General Purpose NPN Silicon Low-level Switching transistor |
ITT Semiconductors |
| 152 |
2N5232 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 153 |
2N5232A |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 154 |
2N5338 |
100 V, 5 A high voltage NPN transistor |
Solid State Devices Inc |
| 155 |
2N5339 |
100 V, 5 A high voltage NPN transistor |
Solid State Devices Inc |
| 156 |
2N5368 |
General purpose NPN silicon transistor |
ITT Semiconductors |
| 157 |
2N5369 |
General purpose NPN silicon transistor |
ITT Semiconductors |
| 158 |
2N5370 |
General purpose NPN silicon transistor |
ITT Semiconductors |
| 159 |
2N5371 |
General purpose NPN silicon transistor |
ITT Semiconductors |
| 160 |
2N5376 |
General Purpose NPN silicon transistor |
ITT Semiconductors |
| 161 |
2N5377 |
General Purpose NPN silicon transistor |
ITT Semiconductors |
| 162 |
2N5496 |
50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE |
Continental Device India Limited |
| 163 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
| 164 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 165 |
2N5575 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 166 |
2N5576 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 167 |
2N5577 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 168 |
2N5578 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 169 |
2N5579 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 170 |
2N5580 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 171 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 172 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 173 |
2N5686 |
Power 50A 80V Discrete NPN |
ON Semiconductor |
| 174 |
2N5770 |
0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE |
Continental Device India Limited |
| 175 |
2N5877 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 176 |
2N5878 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 177 |
2N5885 |
Power 25A 60V Discrete NPN |
ON Semiconductor |
| 178 |
2N5886 |
Power 25A 80V Discrete NPN |
ON Semiconductor |
| 179 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 180 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
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