| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N3055/8 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 62 |
2N3055/9 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 63 |
2N3055A |
Power 15A 60V Discrete NPN |
ON Semiconductor |
| 64 |
2N3055E |
Silicon epitaxial-base NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 65 |
2N3055H |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 66 |
2N3055H |
15 Ampere NPN silicon power transistor 60V 115W |
Motorola |
| 67 |
2N3055W |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 68 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
| 69 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 70 |
2N3439 |
HIGH VOLTAGE NPN TRANSISTORS |
SemeLAB |
| 71 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 72 |
2N3440 |
HIGH VOLTAGE NPN TRANSISTORS |
SemeLAB |
| 73 |
2N3441 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 74 |
2N3442 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 75 |
2N3442 |
Power 10A 140V Discrete NPN |
ON Semiconductor |
| 76 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
| 77 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 78 |
2N3704 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE |
Continental Device India Limited |
| 79 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
| 80 |
2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE |
Continental Device India Limited |
| 81 |
2N3713 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 82 |
2N3713 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 83 |
2N3714 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 84 |
2N3714 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 85 |
2N3715 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 86 |
2N3715 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 87 |
2N3716 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 88 |
2N3716 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 89 |
2N3738 |
High-voltage NPN silicon power transistor |
Motorola |
| 90 |
2N3739 |
High-voltage NPN silicon power transistor |
Motorola |
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