| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2SD2122(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 122 |
2SD2122(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 123 |
2SD2123(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 124 |
2SD2123(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 125 |
2SD639 |
Silicon PNP epitaxial planer type(For low-power general amplification) |
Panasonic |
| 126 |
2SD639 |
Silicon NPN epitaxial planer type(For medium-power general amplification) |
Panasonic |
| 127 |
3N247-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 128 |
3N248-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 129 |
3N249-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 130 |
3N250-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 131 |
3N251-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 132 |
3N252-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 133 |
3N254-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 134 |
3N255-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 135 |
3N256-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 136 |
3N257-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 137 |
3N258-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 138 |
3N259-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 139 |
AH1888 |
MICROPOWER GENERAL-SENSITIVE HALL-EFFECT SWITCH |
Diodes |
| 140 |
AH1888-FJG-7 |
MICROPOWER GENERAL-SENSITIVE HALL-EFFECT SWITCH |
Diodes |
| 141 |
AH1888-FJRG-7 |
MICROPOWER GENERAL-SENSITIVE HALL-EFFECT SWITCH |
Diodes |
| 142 |
AH1888-ZG-7 |
MICROPOWER GENERAL-SENSITIVE HALL-EFFECT SWITCH |
Diodes |
| 143 |
AN-3755 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 144 |
AT90SC19236RT |
Low-power, High performance 8-bit/16-bit secure microcontroller with 192K Byte ROM, 36K Byte EEPROM programmable internal oscillator. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out |
Atmel |
| 145 |
AT90SC19272RC |
Low-power, high-performance, 8-/16-bit secure microcontroller with 192K Byte ROM and 72K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side chan |
Atmel |
| 146 |
AT90SC25672R |
Low-power, High performance 8-bit/16-bit secure microcontroller with 256K Byte ROM, 72K Byte EEPROM. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out of bounds" detectors, side channe |
Atmel |
| 147 |
AT90SC25672RT |
Low-power, High performance 8-bit/16-bit secure microcontroller with 256K Byte ROM, 72K Byte EEPROM. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out of bounds" detectors, side channe |
Atmel |
| 148 |
AT90SC4802R |
Low-power, High performance 8-bit/16-bit secure microcontroller with 48K Byte ROM, 2K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co |
Atmel |
| 149 |
AT90SC4816RS |
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (random Number Generator), "out of bounds" detectors, side chann |
Atmel |
| 150 |
AT90SC6404R |
Low-power, High Performance 8-bit/16-bit secure microcontroller with 64K Byte ROM, 4K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co |
Atmel |
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