Datasheets for ER GE

Datasheets found :: 910

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No.	Part Name	Description	Manufacturer
91	2N5016	UHF Power Generation Using RF Power Transistor - Application Note	RCA Solid State
92	2N5087	Low-Power General Purpose PNP Silicon Amplifier Transistor	ITT Semiconductors
93	2N5220	Low-Power general purpose NPN silicon amplifier transistor	ITT Semiconductors
94	2N5221	Low-Power General purpose PNP silicon amplifier transistor	ITT Semiconductors
95	2N5460	Amplifier General Purpose	Vishay
96	2N5461	Amplifier General Purpose	Vishay
97	2N5462	Amplifier General Purpose	Vishay
98	2N5470	UHF Power Generation Using RF Power Transistor - Application Note	RCA Solid State
99	2N5575	High-power general purpose NPN transistor, metal case	IPRS Baneasa
100	2N5576	High-power general purpose NPN transistor, metal case	IPRS Baneasa
101	2N5577	High-power general purpose NPN transistor, metal case	IPRS Baneasa
102	2N5578	High-power general purpose NPN transistor, metal case	IPRS Baneasa
103	2N5579	High-power general purpose NPN transistor, metal case	IPRS Baneasa
104	2N5580	High-power general purpose NPN transistor, metal case	IPRS Baneasa
105	2N5919	UHF Power Generation Using RF Power Transistor - Application Note	RCA Solid State
106	2N6254	High Power General Purpose NPN Transistor - metal case	IPRS Baneasa
107	2N6257	High Power General Purpose NPN Transistor - metal case	IPRS Baneasa
108	2N6258	High-power general purpose NPN transistor, metal case	IPRS Baneasa
109	2N6259	High-power general purpose NPN transistor, metal case	IPRS Baneasa
110	2N6262	High Power General Purpose NPN Transistor - metal case	IPRS Baneasa
111	2N6371	High Power General Purpose NPN Transistor - metal case	IPRS Baneasa
112	2N929	Silicon low power general purpose NPN transistor - metal case	IPRS Baneasa
113	2N930	Silicon low power general purpose NPN transistor - metal case	IPRS Baneasa
114	2SB1407(L)	Bipolar power general purpose transistor	Hitachi Semiconductor
115	2SB1407(S)	Bipolar power general purpose transistor	Hitachi Semiconductor
116	2SB1409(L)	Bipolar power general purpose transistor	Hitachi Semiconductor
117	2SB1409(S)	Bipolar power general purpose transistor	Hitachi Semiconductor
118	2SC9011	Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic =	USHA India LTD
119	2SD2121(L)	Bipolar power general purpose transistor	Hitachi Semiconductor
120	2SD2121(S)	Bipolar power general purpose transistor	Hitachi Semiconductor

Datasheets found :: 910

Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |