| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N2963 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 62 |
2N2964 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 63 |
2N2965 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 64 |
2N5016 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 65 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 66 |
2N5220 |
Low-Power general purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 67 |
2N5221 |
Low-Power General purpose PNP silicon amplifier transistor |
ITT Semiconductors |
| 68 |
2N5460 |
Amplifier General Purpose |
Vishay |
| 69 |
2N5461 |
Amplifier General Purpose |
Vishay |
| 70 |
2N5462 |
Amplifier General Purpose |
Vishay |
| 71 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 72 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 73 |
2SB1407(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 74 |
2SB1407(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 75 |
2SB1409(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 76 |
2SB1409(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 77 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 78 |
2SD2121(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 79 |
2SD2121(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 80 |
2SD2122(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 81 |
2SD2122(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 82 |
2SD2123(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 83 |
2SD2123(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 84 |
2SD639 |
Silicon PNP epitaxial planer type(For low-power general amplification) |
Panasonic |
| 85 |
2SD639 |
Silicon NPN epitaxial planer type(For medium-power general amplification) |
Panasonic |
| 86 |
3N247-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 87 |
3N248-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 88 |
3N249-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 89 |
3N250-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 90 |
3N251-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
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