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Datasheets for INSULATE

Datasheets found :: 1130
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 BCR3KM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
122 BCR3KM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
123 BCR3PM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
124 BCR5 MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
125 BCR5AM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
126 BCR5AS MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
127 BCR5KM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
128 BCR5PM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
129 BCR6 MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
130 BCR6AM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
131 BCR8 MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
132 BCR8CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
133 BCR8CS MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
134 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Powerex Power Semiconductors
135 BCR8PM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
136 BCR8PM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
137 BCR8PM-18 MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
138 BCR8PM-20 MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
139 BCR8UM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
140 BFR29 Silicon n channel field effect transistor, insulated GATE FET (MOST) Mullard
141 BFS28 Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) Mullard
142 BSI Moulded and Insulated Wirewound Precision Power Resistors Axial Leads Vishay
143 BSM100GB120DN2 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
144 BSM100GB120DN2K IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
145 BSM100GB170DN2 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
146 BSM100GT120DN2 IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
147 BSM150GB120DN2 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
148 BSM150GB170DN2 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
149 BSM200GAL120DN2 IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) Siemens
150 BSM200GB120DN2 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens


Datasheets found :: 1130
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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