No. |
Part Name |
Description |
Manufacturer |
151 |
BSM25GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
152 |
BSM25GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
153 |
BSM400GB60DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
154 |
BSM50GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
155 |
BSM50GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
156 |
BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
157 |
BSM50GD120DN2E3226 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
158 |
BSM75GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
159 |
BSM75GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
160 |
BSV81 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
161 |
BTA12 |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
162 |
BTA12-200B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
163 |
BTA12-50B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
164 |
BTA12-600B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated |
New Jersey Semiconductor |
165 |
BTA12-600BS |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
166 |
BTA12-600CW |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated |
New Jersey Semiconductor |
167 |
BTA12-600SW |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated |
New Jersey Semiconductor |
168 |
BTA12-800B |
Thyristor TRIAC 800V 126A 3-Pin(3+Tab) TO-220AB Insulated |
New Jersey Semiconductor |
169 |
BTW69-1200N |
50 A - 1200 V non-insulated SCR thyristor |
ST Microelectronics |
170 |
BUK854-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
171 |
BUK856-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
172 |
BUK856-800 |
Insulated Gate Bipolar Transistor IGBT |
Philips |
173 |
BUK856-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
174 |
BUK866-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
175 |
C67070-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
176 |
C67070-A2120-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
177 |
C67070-A2300-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
178 |
C67070-A2301-A70 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
179 |
C67070-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
180 |
C67070-A2701-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
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