No. |
Part Name |
Description |
Manufacturer |
91 |
BCR5 |
MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
92 |
BCR5AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
93 |
BCR5AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
94 |
BCR5KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
95 |
BCR5PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
96 |
BCR6 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
97 |
BCR6AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
98 |
BCR8 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
99 |
BCR8CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
100 |
BCR8CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
101 |
BCR8CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
102 |
BCR8PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
103 |
BCR8PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
104 |
BCR8PM-18 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
105 |
BCR8PM-20 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
106 |
BCR8UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
107 |
BFR29 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
108 |
BFS28 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
109 |
BSI |
Moulded and Insulated Wirewound Precision Power Resistors Axial Leads |
Vishay |
110 |
BSM100GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
111 |
BSM100GB120DN2K |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
112 |
BSM100GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
113 |
BSM100GT120DN2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
114 |
BSM150GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
115 |
BSM150GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
116 |
BSM200GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
117 |
BSM200GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
118 |
BSM25GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
119 |
BSM25GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
120 |
BSM400GB60DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
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