No. |
Part Name |
Description |
Manufacturer |
121 |
IRF530N |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
122 |
IRF530N |
22A/ 100V/ 0.064 Ohm/ N-Channel Power MOSFET |
Intersil |
123 |
IRF530N |
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
124 |
IRF530N |
N-channel TrenchMOS(tm) transistor |
Philips |
125 |
IRF530NL |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
126 |
IRF530NLPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
127 |
IRF530NPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
128 |
IRF530NS |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
129 |
IRF530NS |
Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
130 |
IRF530NSPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
131 |
IRF530NSTRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
132 |
IRF530NSTRLPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
133 |
IRF530NSTRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
134 |
IRF530NSTRRPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
135 |
IRF530PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
136 |
IRF530S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
137 |
IRF530STRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
138 |
IRF530STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
139 |
IRF531 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
140 |
IRF531 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
141 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
142 |
IRF531 |
Trans MOSFET N-CH 80V 14A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
143 |
IRF531 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
144 |
IRF531 |
N-channel MOSFET, 80V, 14A |
SGS Thomson Microelectronics |
145 |
IRF531 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
146 |
IRF531F1 |
N-channel MOSFET, 80V, 9A |
SGS Thomson Microelectronics |
147 |
IRF531FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
148 |
IRF532 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
149 |
IRF532 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
150 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
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