No. |
Part Name |
Description |
Manufacturer |
31 |
IRF512 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
32 |
IRF512 |
N-channel power MOSFET, 100V, 4.9A |
Harris Semiconductor |
33 |
IRF512 |
Trans MOSFET N-CH 100V 3.5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
34 |
IRF512 |
N-Channel Power MOSFET |
Samsung Electronic |
35 |
IRF512 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A |
Siliconix |
36 |
IRF512 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
37 |
IRF513 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
38 |
IRF513 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
39 |
IRF513 |
N-channel power MOSFET, 80V, 4.9A |
Harris Semiconductor |
40 |
IRF513 |
Trans MOSFET N-CH 60V 3.5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
41 |
IRF513 |
N-Channel Power MOSFET |
Samsung Electronic |
42 |
IRF513 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 3.5A |
Siliconix |
43 |
IRF513 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
44 |
IRF520 |
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features |
Fairchild Semiconductor |
45 |
IRF520 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
46 |
IRF520 |
9.2A/ 100V/ 0.270 Ohm/ N-Channel Power MOSFET |
Intersil |
47 |
IRF520 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
48 |
IRF520 |
N-Channel Power MOSFET |
Samsung Electronic |
49 |
IRF520 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
50 |
IRF520 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
51 |
IRF520 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 8A |
Siliconix |
52 |
IRF520 |
N-CHANNEL 100V - 0.115 OHM - 10A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
53 |
IRF520 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
54 |
IRF520A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
55 |
IRF520CF |
Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
56 |
IRF520FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
57 |
IRF520FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
58 |
IRF520FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
59 |
IRF520L |
Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A) |
International Rectifier |
60 |
IRF520N |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
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