No. |
Part Name |
Description |
Manufacturer |
91 |
IRF5210STRL |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
92 |
IRF5210STRR |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
93 |
IRF5210STRRPBF |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
94 |
IRF522 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
95 |
IRF522 |
Trans MOSFET N-CH 100V 7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
96 |
IRF522 |
N-Channel Power MOSFET |
Samsung Electronic |
97 |
IRF522 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 7A |
Siliconix |
98 |
IRF522 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
99 |
IRF522R |
Trans MOSFET N-CH 100V 7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
100 |
IRF523 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
101 |
IRF523 |
Trans MOSFET N-CH 60V 7A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
102 |
IRF523 |
N-Channel Power MOSFET |
Samsung Electronic |
103 |
IRF523 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 7A |
Siliconix |
104 |
IRF523 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
105 |
IRF530 |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
106 |
IRF530 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
107 |
IRF530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
108 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
109 |
IRF530 |
Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
110 |
IRF530 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
111 |
IRF530 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
112 |
IRF530 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
113 |
IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
114 |
IRF530 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
115 |
IRF530 |
N-CHANNEL 100V - 0.115 OHM - 14A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
116 |
IRF530 |
100 V,power field effect transistor |
TRANSYS Electronics Limited |
117 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
TRSYS |
118 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
119 |
IRF5305 |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
120 |
IRF5305 |
Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
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