No. |
Part Name |
Description |
Manufacturer |
121 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
122 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
123 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
124 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
125 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
126 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
127 |
2N5942 |
Application Note - Broadband Linear Power Amplifiers using Push-Pull transistors |
Motorola |
128 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
129 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
130 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
131 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
132 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
133 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
134 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
135 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
136 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
137 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
138 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
139 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
140 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
141 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
142 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
143 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
144 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
145 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
146 |
2N6100 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
147 |
2N6101 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
148 |
2N6102 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
149 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
150 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
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