| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 152 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 153 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 154 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 155 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 156 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 157 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 158 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 159 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 160 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 161 |
2SC1763 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 40W power, 28V supply voltage |
TOSHIBA |
| 162 |
2SC1764 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 80W power, 28V supply voltage |
TOSHIBA |
| 163 |
2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 164 |
2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 165 |
2SC2395 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 166 |
2SC2509 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications |
TOSHIBA |
| 167 |
2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) |
TOSHIBA |
| 168 |
2SC2531 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications 28V supply voltage use |
TOSHIBA |
| 169 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 170 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 171 |
317B |
Micropower/ 600kHz PWM DC/DC Converters |
Linear Technology |
| 172 |
3250 |
MONOLITHIC DUAL NPN TRANSISTORS |
Linear Systems |
| 173 |
325S01 |
NONLINEAR MODEL |
NEC |
| 174 |
33702 |
3.0 A Switch-Mode Power Supply with Linear Regulator |
Motorola |
| 175 |
3433EFE |
High Voltage Step-Up/Step-Down DC/DC Converter |
Linear Technology |
| 176 |
3433IFE |
High Voltage Step-Up/Step-Down DC/DC Converter |
Linear Technology |
| 177 |
3450 |
Precision Linear Isolation Amplifier |
Burr Brown |
| 178 |
3451 |
Precision Linear Isolation Amplifier |
Burr Brown |
| 179 |
3452 |
Precision Linear Isolation Amplifier |
Burr Brown |
| 180 |
3455 |
Precision Linear Isolation Amplifier |
Burr Brown |
| | | |
