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Datasheets for NEAR

Datasheets found :: 65618
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No. Part Name Description Manufacturer
61 1N759 12 V, 400 mW silicon linear diode BKC International Electronics
62 1N759 500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). Fairchild Semiconductor
63 1N759A 12 V, 400 mW silicon linear diode BKC International Electronics
64 20L08 2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
65 20L15 2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
66 2100 2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
67 278R12 BIPOLAR LINEAR INTEGRATED CIRCUIT (4 TERMINAL 2A OUTPUT LOW DROP VOLTAGE REGULATOR) Korea Electronics (KEC)
68 2N1873A SCRs 1.25 Amp / Planear Microsemi
69 2N3295 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
70 2N3296 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
71 2N3297 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
72 2N3440S Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications SGS-ATES
73 2N3445 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola
74 2N3446 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola
75 2N3447 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola
76 2N3448 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola
77 2N3713 Epitaxial-base transistor for linear and switching applications SGS-ATES
78 2N3714 Epitaxial-base transistor for linear and switching applications SGS-ATES
79 2N3715 Epitaxial-base transistor for linear and switching applications SGS-ATES
80 2N3716 Epitaxial-base transistor for linear and switching applications SGS-ATES
81 2N3773 High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. USHA India LTD
82 2N3773AR NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. USHA India LTD
83 2N3789 Epitaxial-base transistor for linear and switching applications SGS-ATES
84 2N3790 Epitaxial-base transistor for linear and switching applications SGS-ATES
85 2N3791 Epitaxial-base transistor for linear and switching applications SGS-ATES
86 2N3792 Epitaxial-base transistor for linear and switching applications SGS-ATES
87 2N3954 Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Linear Systems
88 2N3954A Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Linear Systems
89 2N3955 Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Linear Systems
90 2N3956 Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Linear Systems


Datasheets found :: 65618
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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