Datasheets for RANSISTO

Datasheets found :: 91315

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No.	Part Name	Description	Manufacturer
121	1224-10	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS	ST Microelectronics
122	128-Z	MOS Field Effect Power Transistors	Unknow
123	12N035	N-Channel Field Effect Transistor	BayLinear
124	12N035S	N-channel field effect transistor	BayLinear
125	12N035T	N-channel field effect transistor	BayLinear
126	13003BR	NPN EPITAXIAL PLANAR TRANSISTOR	Hi-Sincerity Microelectronics
127	13003BR	NPN EPITAXIAL PLANAR TRANSISTOR	Hi-Sincerity Microelectronics
128	13003BR	TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING)	Korea Electronics (KEC)
129	13003BR	POWER TRANSISTORS(1.5A,300-400V,40W)	MOSPEC Semiconductor
130	13003BR	1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS	Motorola
131	13003BR	NPN SILICON TRANSISTOR	Wing Shing Computer Components
132	1314AB60	60 W, 25 V, 1350-1400 MHz common emitter transistor	GHz Technology
133	132-Z	MOS Field Effect Power Transistors	Unknow
134	133-Z	MOS Field Effect Power Transistors	Unknow
135	1401	Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network	Vishay
136	1403	Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network	Vishay
137	1413	Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks	Vishay
138	1415-2	2 W, 20 V, 1430-1540 MHz common base transistor	GHz Technology
139	1415-7	7 W, 20 V, 1430-1540 MHz common base transistor	GHz Technology
140	1416-100	100 W, 50 V, 1400-1600 MHz common base transistor	GHz Technology
141	1416-100	High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications	SGS Thomson Microelectronics
142	1416-200	High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications	SGS Thomson Microelectronics
143	1416GN-120E	GaN Transistors	Microsemi
144	1416GN-120EL	GaN Transistors	Microsemi
145	1416GN-120EP	GaN Transistors	Microsemi
146	1416GN-600V	GaN Transistors	Microsemi
147	1417	Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413	Vishay
148	1417-12	1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications	SGS Thomson Microelectronics
149	1417-12A	12 W, 28 V, 1400-1700 MHz common base transistor	GHz Technology
150	1417-25	1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications	SGS Thomson Microelectronics

Datasheets found :: 91315

Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |