No. |
Part Name |
Description |
Manufacturer |
151 |
1417-6A |
6 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
152 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
153 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
154 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
155 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
156 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
157 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
158 |
1516-35 |
35 W, 28 V, 1450-1550 MHz common base transistor |
GHz Technology |
159 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
160 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
161 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
162 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
163 |
1528-6 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
164 |
1528-6 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
165 |
1528-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
166 |
1528-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
167 |
1530-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
168 |
1530-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
169 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
170 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
171 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
172 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
173 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
174 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
175 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
176 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
177 |
15C02CH |
NPN EPITAXIAL SILICON TRANSISTOR |
SANYO |
178 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
179 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
180 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
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