No. |
Part Name |
Description |
Manufacturer |
211 |
184T2 |
200V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
212 |
184T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
213 |
184T2 |
Power NPN transistor - High Voltage |
SESCOSEM |
214 |
185T2 |
250V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
215 |
185T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
216 |
1888-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
217 |
1888-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
218 |
1891-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
219 |
1891-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
220 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
221 |
1893-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
222 |
1893-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
ST Microelectronics |
223 |
1897 |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
224 |
1897 |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS |
ST Microelectronics |
225 |
1898 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
226 |
1898 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
227 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
228 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
229 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
230 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
231 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
232 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
233 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
234 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
235 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
236 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
237 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
238 |
1DI200Z-100 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
239 |
1DI200Z-100 |
POWER TRANSISTOR MODULE |
Fuji Electric |
240 |
1DI200Z-120 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
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