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Datasheets for RANSISTO

Datasheets found :: 91315
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No. Part Name Description Manufacturer
211 184T2 200V NPN silicon transistot, diffused mesa Comset Semiconductors
212 184T2 NPN Power Transistor triple diffused - Fast Switching SESCOSEM
213 184T2 Power NPN transistor - High Voltage SESCOSEM
214 185T2 250V NPN silicon transistot, diffused mesa Comset Semiconductors
215 185T2 NPN Power Transistor triple diffused - Fast Switching SESCOSEM
216 1888-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS SGS Thomson Microelectronics
217 1888-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS ST Microelectronics
218 1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS SGS Thomson Microelectronics
219 1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS ST Microelectronics
220 1893 1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications SGS Thomson Microelectronics
221 1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS SGS Thomson Microelectronics
222 1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS ST Microelectronics
223 1897 RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS SGS Thomson Microelectronics
224 1897 RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS ST Microelectronics
225 1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS SGS Thomson Microelectronics
226 1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS ST Microelectronics
227 1920A05 5 W, 26 V, 1930-1990 MHz common emitter transistor GHz Technology
228 1920A12 12 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
229 1920A20 20 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
230 1920AB12 12 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
231 1920AB25 25 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
232 1920AB35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
233 1920AB4 4 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
234 1920AB60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
235 1920CD35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
236 1920CD60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
237 1922-18 1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications SGS Thomson Microelectronics
238 1DI200Z-100 Power transistor module for power switching, AC and DC motor controls COLLMER SEMICONDUCTOR INC
239 1DI200Z-100 POWER TRANSISTOR MODULE Fuji Electric
240 1DI200Z-120 Power transistor module for power switching, AC and DC motor controls COLLMER SEMICONDUCTOR INC


Datasheets found :: 91315
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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