| No. |
Part Name |
Description |
Manufacturer |
| 121 |
EFT307 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 122 |
EFT308 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 123 |
EFT317 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
| 124 |
EFT319 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
| 125 |
EFT320 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
| 126 |
EFT321 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 127 |
EFT322 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 128 |
EFT323 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 129 |
EFT351 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 130 |
EFT352 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 131 |
EFT353 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 132 |
FJY3002R |
NPN Epitaxial Silicon Transistor with Bias Resistor |
Fairchild Semiconductor |
| 133 |
FJY3004R |
NPN Epitaxial Silicon Transistor with Bias Resistor |
Fairchild Semiconductor |
| 134 |
FJY4002R |
PNP Epitaxial Silicon Transistor with Bias Resistor |
Fairchild Semiconductor |
| 135 |
FJY4006R |
PNP Epitaxial Silicon Transistor with Bias Resistor |
Fairchild Semiconductor |
| 136 |
GD617 |
Germanium alloy PNP transistor with a power dissipation of 4 W |
Tesla Elektronicke |
| 137 |
GD618 |
Germanium alloy PNP transistor with a power dissipation of 4 W |
Tesla Elektronicke |
| 138 |
GD619 |
Germanium alloy PNP transistor with a power dissipation of 4 W |
Tesla Elektronicke |
| 139 |
GS121 |
Slow germanium PNP switching transistor with high base-emitter voltage strength, suitable for use in calculating machines |
RFT |
| 140 |
GS122 |
Slow germanium PNP switching transistor with high base-emitter voltage strength, suitable for use in calculating machines |
RFT |
| 141 |
IRG4BC20KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
| 142 |
IRG4BC20MDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) |
International Rectifier |
| 143 |
IRG4BC20SDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
International Rectifier |
| 144 |
IRG4BC20UDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) |
International Rectifier |
| 145 |
IRG4BC30 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
International Rectifier |
| 146 |
IRG4BC30KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
International Rectifier |
| 147 |
IRG4IBC30F |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
International Rectifier |
| 148 |
IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) |
International Rectifier |
| 149 |
IRG4PH30 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
International Rectifier |
| 150 |
IRG4PH50 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
International Rectifier |
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