| No. |
Part Name |
Description |
Manufacturer |
| 121 |
IRG4BC30KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
International Rectifier |
| 122 |
IRG4IBC30F |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
International Rectifier |
| 123 |
IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) |
International Rectifier |
| 124 |
IRG4PH30 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
International Rectifier |
| 125 |
IRG4PH50 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
International Rectifier |
| 126 |
IRG4PSH71 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A) |
International Rectifier |
| 127 |
IRG4RC10 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) |
International Rectifier |
| 128 |
IRGBC20MD2-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A) |
International Rectifier |
| 129 |
IRGBC20SD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=10A) |
International Rectifier |
| 130 |
IRGBC30MD2-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A) |
International Rectifier |
| 131 |
JAN2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 132 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 133 |
MGP4N60ED |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
ON Semiconductor |
| 134 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 135 |
MGP7N60ED |
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode |
ON Semiconductor |
| 136 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 137 |
MGV12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 138 |
MGW12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 139 |
MGW12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 140 |
MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 141 |
MGW20N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 142 |
MGY20N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 143 |
MGY20N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 144 |
MGY20N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 145 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 146 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 147 |
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 148 |
MGY30N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 149 |
MGY40N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 150 |
MJ10004 |
20A NPN silicon power darlington transistor with base-emitter speedup diode 175W 350V SWITCHMODE SERIES |
Motorola |
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