| No. |
Part Name |
Description |
Manufacturer |
| 211 |
OP750B |
NPN Pho totransistor with Base- Emitter Resistor |
Optek Technology |
| 212 |
OP750C |
NPN Pho totransistor with Base- Emitter Resistor |
Optek Technology |
| 213 |
OP750D |
NPN Pho totransistor with Base- Emitter Resistor |
Optek Technology |
| 214 |
PBSM5240PF |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
Nexperia |
| 215 |
PBSM5240PF |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
NXP Semiconductors |
| 216 |
PBSM5240PFH |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
Nexperia |
| 217 |
PBSM5240PFH |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
NXP Semiconductors |
| 218 |
PHD13003C |
NPN power transistor with integrated diode |
NXP Semiconductors |
| 219 |
PHD13005 |
NPN power transistor with integrated diode |
NXP Semiconductors |
| 220 |
PT550 |
TO-18 Type Phototransistor with Base Terminal |
SHARP |
| 221 |
PT550F |
TO-18 Type Phototransistor with Base Terminal |
SHARP |
| 222 |
PZT2222 |
NPN Silicon Switching Transistor with... |
Infineon |
| 223 |
PZT2907A |
PNP Silicon Switching Transistor with... |
Infineon |
| 224 |
PZT3904 |
Switching Transistors - NPN Silicon Switching Transistor with high current gain |
Infineon |
| 225 |
PZTA42 |
NPN Silicon High Voltage Transistor w... |
Infineon |
| 226 |
PZTA92 |
PNP Silicon High Voltage Transistor w... |
Infineon |
| 227 |
Q62702-F1129 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 228 |
Q62702-F1177 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 229 |
Q62702-F1586 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 230 |
Q62702-F1772 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 231 |
RCA-2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
| 232 |
RT1N137L |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 233 |
RT1N137P |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 234 |
RT1N141C |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 235 |
RT1N141M |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 236 |
RT1N141S |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 237 |
RT1N141T |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 238 |
RT1N141U |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 239 |
RT1N431C |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 240 |
RT1N431M |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
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