| No. |
Part Name |
Description |
Manufacturer |
| 91 |
EFT125 |
Transistor with PNP junctions with germanium, low frequency 350mW |
IPRS Baneasa |
| 92 |
EFT130 |
Transistor with PNP junctions with germanium, low frequency 550mW |
IPRS Baneasa |
| 93 |
EFT131 |
Transistor with PNP junctions with germanium, low frequency 550mW |
IPRS Baneasa |
| 94 |
EFT212 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
| 95 |
EFT213 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
| 96 |
EFT214 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
| 97 |
EFT238 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
| 98 |
EFT239 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
| 99 |
EFT240 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
| 100 |
EFT250 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
| 101 |
EFT306 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 102 |
EFT307 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 103 |
EFT308 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 104 |
EFT317 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
| 105 |
EFT319 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
| 106 |
EFT320 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
| 107 |
EFT321 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 108 |
EFT322 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 109 |
EFT323 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 110 |
EFT351 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 111 |
EFT352 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 112 |
EFT353 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 113 |
FJY3002R |
NPN Epitaxial Silicon Transistor with Bias Resistor |
Fairchild Semiconductor |
| 114 |
FJY3004R |
NPN Epitaxial Silicon Transistor with Bias Resistor |
Fairchild Semiconductor |
| 115 |
FJY4002R |
PNP Epitaxial Silicon Transistor with Bias Resistor |
Fairchild Semiconductor |
| 116 |
FJY4006R |
PNP Epitaxial Silicon Transistor with Bias Resistor |
Fairchild Semiconductor |
| 117 |
GS121 |
Slow germanium PNP switching transistor with high base-emitter voltage strength, suitable for use in calculating machines |
RFT |
| 118 |
GS122 |
Slow germanium PNP switching transistor with high base-emitter voltage strength, suitable for use in calculating machines |
RFT |
| 119 |
IRG4BC20KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
| 120 |
IRG4BC20MDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) |
International Rectifier |
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