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Datasheets for N-CH

Datasheets found :: 32063
Page: | 441 | 442 | 443 | 444 | 445 | 446 | 447 | 448 | 449 |
No. Part Name Description Manufacturer
13321 IRF420 N-CHANNEL POWER MOSFETS Samsung Electronic
13322 IRF420-423 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
13323 IRF421 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
13324 IRF421 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
13325 IRF421 2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs Intersil
13326 IRF421 Trans MOSFET N-CH 450V 2.5A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
13327 IRF421 N-CHANNEL POWER MOSFETS Samsung Electronic
13328 IRF422 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
13329 IRF422 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
13330 IRF422 2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs Intersil
13331 IRF422 Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
13332 IRF422 N-CHANNEL POWER MOSFETS Samsung Electronic
13333 IRF422R Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
13334 IRF423 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
13335 IRF423 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
13336 IRF423 2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs Intersil
13337 IRF423 Trans MOSFET N-CH 450V 2A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
13338 IRF423 N-CHANNEL POWER MOSFETS Samsung Electronic
13339 IRF430 N-Channel Power MOSFETs/ 4.5 A/ 450V/500V Fairchild Semiconductor
13340 IRF430 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
13341 IRF430 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
13342 IRF430 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET Intersil
13343 IRF430 Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA New Jersey Semiconductor
13344 IRF430 N-CHANNEL POWER MOSFETS Samsung Electronic
13345 IRF430 N-CHANNEL POWER MOSFET SemeLAB
13346 IRF430 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A Siliconix
13347 IRF430-433 N-Channel Power MOSFETs/ 4.5 A/ 450V/500V Fairchild Semiconductor
13348 IRF430R Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA New Jersey Semiconductor
13349 IRF431 N-Channel Power MOSFETs/ 4.5 A/ 450V/500V Fairchild Semiconductor
13350 IRF431 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State


Datasheets found :: 32063
Page: | 441 | 442 | 443 | 444 | 445 | 446 | 447 | 448 | 449 |



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