No. |
Part Name |
Description |
Manufacturer |
13321 |
IRF420 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
13322 |
IRF420-423 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
13323 |
IRF421 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
13324 |
IRF421 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
13325 |
IRF421 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
13326 |
IRF421 |
Trans MOSFET N-CH 450V 2.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
13327 |
IRF421 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
13328 |
IRF422 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
13329 |
IRF422 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
13330 |
IRF422 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
13331 |
IRF422 |
Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
13332 |
IRF422 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
13333 |
IRF422R |
Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
13334 |
IRF423 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
13335 |
IRF423 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
13336 |
IRF423 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
13337 |
IRF423 |
Trans MOSFET N-CH 450V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
13338 |
IRF423 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
13339 |
IRF430 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
13340 |
IRF430 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
13341 |
IRF430 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
13342 |
IRF430 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
13343 |
IRF430 |
Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
13344 |
IRF430 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
13345 |
IRF430 |
N-CHANNEL POWER MOSFET |
SemeLAB |
13346 |
IRF430 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
13347 |
IRF430-433 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
13348 |
IRF430R |
Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
13349 |
IRF431 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
13350 |
IRF431 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
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