| No. |
Part Name |
Description |
Manufacturer |
| 13411 |
IRF460 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 13412 |
IRF460 |
Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13413 |
IRF460 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
SemeLAB |
| 13414 |
IRF510 |
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 13415 |
IRF510 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 13416 |
IRF510 |
N-channel power MOSFET, 100V, 5.6A |
Harris Semiconductor |
| 13417 |
IRF510 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13418 |
IRF510 |
5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFET |
Intersil |
| 13419 |
IRF510 |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13420 |
IRF510 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13421 |
IRF510 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 4A |
Siliconix |
| 13422 |
IRF510 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 13423 |
IRF510-513 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
| 13424 |
IRF510A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 13425 |
IRF510F |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13426 |
IRF510G |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13427 |
IRF510S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13428 |
IRF510STRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13429 |
IRF510STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13430 |
IRF511 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
| 13431 |
IRF511 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 13432 |
IRF511 |
N-channel power MOSFET, 80V, 5.6A |
Harris Semiconductor |
| 13433 |
IRF511 |
Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 13434 |
IRF511 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13435 |
IRF511 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 4A |
Siliconix |
| 13436 |
IRF511 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 13437 |
IRF512 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
| 13438 |
IRF512 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
| 13439 |
IRF512 |
N-channel power MOSFET, 100V, 4.9A |
Harris Semiconductor |
| 13440 |
IRF512 |
Trans MOSFET N-CH 100V 3.5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
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