| No. |
Part Name |
Description |
Manufacturer |
| 13471 |
IRF520S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13472 |
IRF520STRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13473 |
IRF520STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13474 |
IRF520V |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13475 |
IRF520V |
Trans MOSFET N-CH 100V 9.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13476 |
IRF520VL |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13477 |
IRF520VLPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13478 |
IRF520VPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13479 |
IRF520VS |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13480 |
IRF520VSTRRPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13481 |
IRF521 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 13482 |
IRF521 |
Trans MOSFET N-CH 60V 8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 13483 |
IRF521 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13484 |
IRF521 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 8A |
Siliconix |
| 13485 |
IRF522 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 13486 |
IRF522 |
Trans MOSFET N-CH 100V 7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13487 |
IRF522 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13488 |
IRF522 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 7A |
Siliconix |
| 13489 |
IRF522R |
Trans MOSFET N-CH 100V 7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13490 |
IRF523 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 13491 |
IRF523 |
Trans MOSFET N-CH 60V 7A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 13492 |
IRF523 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13493 |
IRF523 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 7A |
Siliconix |
| 13494 |
IRF530 |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 13495 |
IRF530 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 13496 |
IRF530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13497 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 13498 |
IRF530 |
Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13499 |
IRF530 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13500 |
IRF530 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
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