| No. |
Part Name |
Description |
Manufacturer |
| 13381 |
IRF442 |
Trans MOSFET N-CH 500V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13382 |
IRF442 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13383 |
IRF442 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 7A |
Siliconix |
| 13384 |
IRF442R |
Trans MOSFET N-CH 500V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13385 |
IRF443 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
| 13386 |
IRF443 |
7A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs |
Intersil |
| 13387 |
IRF443 |
Trans MOSFET N-CH 450V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13388 |
IRF443 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13389 |
IRF443 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 7A |
Siliconix |
| 13390 |
IRF450 |
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET |
Fairchild Semiconductor |
| 13391 |
IRF450 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 13392 |
IRF450 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 13393 |
IRF450 |
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET |
Intersil |
| 13394 |
IRF450 |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13395 |
IRF450 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13396 |
IRF450 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 13397 |
IRF450 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 13A |
Siliconix |
| 13398 |
IRF450R |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13399 |
IRF451 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 13400 |
IRF451 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 13401 |
IRF451 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13402 |
IRF451 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 13A |
Siliconix |
| 13403 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 13404 |
IRF452 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 13405 |
IRF452 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13406 |
IRF452 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 12A |
Siliconix |
| 13407 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 13408 |
IRF453 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 13409 |
IRF453 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13410 |
IRF453 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 12A |
Siliconix |
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