| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
2N5942 |
Application Note - Broadband Linear Power Amplifiers using Push-Pull transistors |
Motorola |
| 1352 |
2N5945 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 1353 |
2N5946 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 1354 |
2N5949 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 1355 |
2N5950 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 1356 |
2N5951 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 1357 |
2N5952 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 1358 |
2N5952_D74Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 1359 |
2N5952_D75Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 1360 |
2N5953 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 1361 |
2N5961 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1362 |
2N5962 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1363 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 1364 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 1365 |
2N6099 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM141 |
SESCOSEM |
| 1366 |
2N6099 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 1367 |
2N6101 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM142 |
SESCOSEM |
| 1368 |
2N6101 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 1369 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
| 1370 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| 1371 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 1372 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 1373 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 1374 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 1375 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 1376 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 1377 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 1378 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 1379 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1380 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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