| No. |
Part Name |
Description |
Manufacturer |
| 1441 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 1442 |
2N930 |
AMPLIFIER TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1443 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 1444 |
2N930 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 1445 |
2N930 |
Low level amplifier transistor |
SGS-ATES |
| 1446 |
2N930A |
AMPLIFIER TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1447 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 1448 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1449 |
2N997 |
NPN silicon transistor darlington amplifiers |
Sprague |
| 1450 |
2N998 |
Darlington amplifier containing two NPN silicon anular transistors |
Motorola |
| 1451 |
2N999 |
Darlington amplifier containing two NPN silicon anular transistors |
Motorola |
| 1452 |
2SA0683 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1453 |
2SA0684 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1454 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 1455 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 1456 |
2SA0719 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1457 |
2SA0720 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1458 |
2SA0720A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1459 |
2SA0777 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1460 |
2SA0838 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1461 |
2SA0879 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1462 |
2SA0921 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1463 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1464 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1465 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1466 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 1467 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 1468 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 1469 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 1470 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
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