| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
| 1382 |
2N6483 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 1383 |
2N6484 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 1384 |
2N6485 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 1385 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1386 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1387 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1388 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1389 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1390 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1391 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1392 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1393 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1394 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 1395 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
| 1396 |
2N669 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 1397 |
2N696 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
| 1398 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1399 |
2N697 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
| 1400 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 1401 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 1402 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 1403 |
2N707 |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 1404 |
2N707 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 1405 |
2N707A |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 1406 |
2N718 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 1407 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1408 |
2N718A |
NPN Small Signal General Purpose Amplifiers |
Fairchild Semiconductor |
| 1409 |
2N721 |
PNP silicon annular transistor for high-frequency general-purpose amplifier applications |
Motorola |
| 1410 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| | | |
