| No. |
Part Name |
Description |
Manufacturer |
| 13651 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 13652 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 13653 |
2N2218A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 13654 |
2N2218A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 13655 |
2N2218A |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 13656 |
2N2218A |
Transistor, high speed saturated switches |
SGS-ATES |
| 13657 |
2N2218A |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 13658 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| 13659 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| 13660 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| 13661 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 13662 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 13663 |
2N2219 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 13664 |
2N2219 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 13665 |
2N2219 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2905 PNP complementary |
Motorola |
| 13666 |
2N2219 |
30V (2N2219) 50V (2N2219A, 2N2219AL), 800mA NPN Small Signal Transistor |
ON Semiconductor |
| 13667 |
2N2219 |
30V (2N2219) 50V (2N2219A, 2N2219AL), 800mA NPN Small Signal Transistor |
ON Semiconductor |
| 13668 |
2N2219 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 13669 |
2N2219 |
Transistor, high speed saturated switches |
SGS-ATES |
| 13670 |
2N2219 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 13671 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 13672 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 13673 |
2N2219A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 13674 |
2N2219A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 13675 |
2N2219A |
Ic=800mA, Vce=10V transistor |
MCC |
| 13676 |
2N2219A |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 13677 |
2N2219A |
Transistor, high speed saturated switches |
SGS-ATES |
| 13678 |
2N2219A |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 13679 |
2N2220 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| 13680 |
2N2220 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| | | |
