| No. |
Part Name |
Description |
Manufacturer |
| 13711 |
2N2222A |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 13712 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 13713 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 13714 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 13715 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 13716 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 13717 |
2N2222AHR |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13718 |
2N2222AHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13719 |
2N2222AHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13720 |
2N2222ARHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13721 |
2N2222ARHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13722 |
2N2222ARUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13723 |
2N2222ARUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13724 |
2N2222AUB1 |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13725 |
2N2222AUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13726 |
2N2222AUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13727 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
| 13728 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
| 13729 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
| 13730 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 13731 |
2N2243 |
NPN Transistor Medium Power, fast switching |
Amelco Semiconductor |
| 13732 |
2N2243A |
NPN Transistor Medium Power, fast switching |
Amelco Semiconductor |
| 13733 |
2N2270 |
1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 13734 |
2N2270 |
1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 13735 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 13736 |
2N2282 |
Germanium PNP Power Transistor, TO-37 Package |
Silicon Transistor Corporation |
| 13737 |
2N2283 |
Germanium PNP Power Transistor, TO-37 Package |
Silicon Transistor Corporation |
| 13738 |
2N2284 |
Germanium PNP Power Transistor, TO-37 Package |
Silicon Transistor Corporation |
| 13739 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 13740 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
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