No. |
Part Name |
Description |
Manufacturer |
13831 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
13832 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
13833 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
13834 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
13835 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
13836 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
13837 |
2N2586 |
NPN Transistor General Purpose, low noise, high current gain, low leakage |
Amelco Semiconductor |
13838 |
2N2586 |
NPN Transistor General Purpose, low noise, high current gain, low leakage |
Amelco Semiconductor |
13839 |
2N2586 |
NPN Transistor General Purpose, low noise, high current gain, low leakage |
Amelco Semiconductor |
13840 |
2N2604 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
13841 |
2N2604 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
13842 |
2N2604 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
13843 |
2N2605 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
13844 |
2N2605 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
13845 |
2N2605 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
13846 |
2N2639 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
13847 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
13848 |
2N2640 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
13849 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
13850 |
2N2641 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
13851 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
13852 |
2N2642 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
13853 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
13854 |
2N2643 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
13855 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
13856 |
2N2644 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
13857 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
13858 |
2N2646 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
13859 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
13860 |
2N2647 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
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