| No. |
Part Name |
Description |
Manufacturer |
| 13741 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 13742 |
2N2297 |
NPN Transistor Medium Power, high collector current |
Amelco Semiconductor |
| 13743 |
2N2297 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 13744 |
2N2323 |
SCRs 1.6 Amperes RMS, 50V |
Motorola |
| 13745 |
2N2324 |
SCRs 1.6 Amperes RMS, 100V |
Motorola |
| 13746 |
2N2326 |
SCRs 1.6 Amperes RMS, 200V |
Motorola |
| 13747 |
2N2329 |
SCRs 1.6 Amperes RMS, 400V |
Motorola |
| 13748 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 13749 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 13750 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 13751 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 13752 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 13753 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 13754 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 13755 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 13756 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 13757 |
2N2368 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 13758 |
2N2368 |
Transistor, high speed saturated switches |
SGS-ATES |
| 13759 |
2N2369 |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 13760 |
2N2369 |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 13761 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 13762 |
2N2369 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 13763 |
2N2369 |
Transistor, high speed saturated switches |
SGS-ATES |
| 13764 |
2N2369A |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 13765 |
2N2369A |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 13766 |
2N2369A |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 13767 |
2N2369A |
Transistor, high speed saturated switches |
SGS-ATES |
| 13768 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 13769 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 13770 |
2N2369ADCSM |
DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
SemeLAB |
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