| No. |
Part Name |
Description |
Manufacturer |
| 13651 |
IRF610B_FP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A |
Fairchild Semiconductor |
| 13652 |
IRF610PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13653 |
IRF610R |
Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13654 |
IRF610S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13655 |
IRF610S |
Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 13656 |
IRF610STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13657 |
IRF610STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13658 |
IRF611 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 13659 |
IRF611 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 13660 |
IRF611 |
Trans MOSFET N-CH 150V 2.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13661 |
IRF611 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13662 |
IRF611 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A |
Siliconix |
| 13663 |
IRF612 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 13664 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 13665 |
IRF612 |
Trans MOSFET N-CH 200V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13666 |
IRF612 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13667 |
IRF612 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A |
Siliconix |
| 13668 |
IRF613 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 13669 |
IRF613 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 13670 |
IRF613 |
Trans MOSFET N-CH 150V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13671 |
IRF613 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13672 |
IRF613 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A |
Siliconix |
| 13673 |
IRF614 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13674 |
IRF614 |
2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET |
Intersil |
| 13675 |
IRF614B |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 13676 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
| 13677 |
IRF614PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13678 |
IRF614S |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13679 |
IRF620 |
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 13680 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| | | |
