| No. |
Part Name |
Description |
Manufacturer |
| 13741 |
IRF630NL |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13742 |
IRF630NLPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13743 |
IRF630NPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13744 |
IRF630NS |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13745 |
IRF630NSPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13746 |
IRF630NSTRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13747 |
IRF630NSTRLPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13748 |
IRF630NSTRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13749 |
IRF630NSTRR |
Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R |
New Jersey Semiconductor |
| 13750 |
IRF630S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13751 |
IRF630S |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 13752 |
IRF630S |
N-channel TrenchMOS transistor |
Philips |
| 13753 |
IRF630SPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13754 |
IRF630ST4 |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 13755 |
IRF630STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13756 |
IRF630STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13757 |
IRF631 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 13758 |
IRF631 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 13759 |
IRF631 |
Trans MOSFET N-CH 150V 9A |
New Jersey Semiconductor |
| 13760 |
IRF631 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13761 |
IRF631 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A |
Siliconix |
| 13762 |
IRF632 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 13763 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 13764 |
IRF632 |
Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13765 |
IRF632 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13766 |
IRF632 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A |
Siliconix |
| 13767 |
IRF632R |
Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13768 |
IRF633 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 13769 |
IRF633 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 13770 |
IRF633 |
Trans MOSFET N-CH 150V 8A |
New Jersey Semiconductor |
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