| No. |
Part Name |
Description |
Manufacturer |
| 13681 |
IRF620 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13682 |
IRF620 |
5.0A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET |
Intersil |
| 13683 |
IRF620 |
Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13684 |
IRF620 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13685 |
IRF620 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 13686 |
IRF620 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A |
Siliconix |
| 13687 |
IRF6201 |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 13688 |
IRF6201PBF |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 13689 |
IRF6201TRPBF |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 13690 |
IRF620B |
200V N-Channel MOSFET |
Fairchild Semiconductor |
| 13691 |
IRF620B_FP001 |
200V N-Channel B-FET / Substitute of IRF620 & IRF620A |
Fairchild Semiconductor |
| 13692 |
IRF620FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 13693 |
IRF620PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13694 |
IRF620S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13695 |
IRF620STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13696 |
IRF620STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13697 |
IRF621 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 13698 |
IRF621 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 13699 |
IRF621 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13700 |
IRF621 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 5A |
Siliconix |
| 13701 |
IRF622 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 13702 |
IRF622 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 13703 |
IRF622 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13704 |
IRF622 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 4A |
Siliconix |
| 13705 |
IRF623 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 13706 |
IRF623 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 13707 |
IRF623 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13708 |
IRF623 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 4A |
Siliconix |
| 13709 |
IRF624 |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 13710 |
IRF624 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
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